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知乎,让每一次点击都充满意义 —— 欢迎来到知乎,发现问题背后的世界。
知乎,让每一次点击都充满意义 —— 欢迎来到知乎,发现问题背后的世界。
You'll be able to modify the talked about parameters, and compare it having a "great" final result which can take 2 hours siumlation time. Based on your conditions, you may accelerate the simulation time.
So can someone be sure to reveal how FET with minimal threshold voltage has higher pace and higher leakage latest although FET with high threshold might be slow but small on electrical power?
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i had exact same issue with PICs , cek tat the sample data files operate in usual pace, i cudnt correct the challenge entirely, try out popularsongs getting rid of the crystal and Placing mcu velocity at 1Mhz in its Houses
* You've got lots of wires gonna floor by means of other wires. popular songs The simulator is using cpu cycles needlessly to compute current in People joined wires (No matter that their volt degree is zero). Give Each individual of Individuals wires its have ground.
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In case of lvt, conc. of doping and oxide thickness is much more Assess to hvt.. Which The key reason why that much more the doping, so a lot more pace plus much more leakage Look at to hvt.
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Ordinarily this happens after you externally wire a crystal etcetera. - this introduces a very significant pace oscillator which bottlenecks the simulation and is completely superfluous in any case. Clock frequency is specified like a home of the microcontroller machine.